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IXFK48N50Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPer FET Power MOSFETs Q-CLASS
HiPerFETTM
Power MOSFETs
Q-CLASS
Single MOSFET Die
VDSS ID25
RDS(on)
IXFK/IXFX 48N50Q 500 V 48 A 100 mW
IXFK/IXFX 44N50Q 500 V 44 A 120 mW
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low t
rr
Preliminary data
Symbol
VDSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
44N50
48N50
44N50
48N50
500
V
500
V
±20
V
±30
V
44
A
48
A
176
A
192
A
48
A
60
mJ
2.5
J
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6g
10 g
Symbol
VDSS
VGS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
VGS = 0 V, ID = 250uA
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
V = 10 V, I = 0.5 • I
GS
D
D25
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
500
V
2.0
4.0 V
±100 nA
TJ = 125°C
44N50
48N50
100 mA
2 mA
120 mW
100 mW
PLUS 247TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
switching (UIS) rated
• Molding epoxies meet UL 94V-0
flammability classification
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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