English
Language : 

IXFK38N80Q2_08 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q2-Class
HiPerFETTM
Power MOSFETs
Q2-Class
IXFK38N80Q2
IXFN38N80Q2
IXFX38N80Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IA
TC = 25°C
EAS
TC = 25°C
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
38
A
150
A
38
A
4
J
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
M
d
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting torque
(TO-264)
Terminal connection torque (SOT-227B)
20
735
-55 ... +150
150
-55 ... +150
300
260
2500
3000
1.5/13
1.3/11.5
V/ns
W
°C
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
FC
Weight
Mounting force
TO-264
PLUS247
SOT-227B
(PLUS247)
20..120 /4.5..27
10
6
30
N/lb.
g
g
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VGS = 0V, ID = 3mA
800
V
VDS = VGS, ID = 8mA
3.0
5.5 V
VGS = ± 30V, VDS = 0V
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
± 200 nA
50 μA
2 mA
220 mΩ
VDSS =
ID25 =
RDS(on) ≤
trr
≤
800V
38A
220mΩ
250ns
TO-264 (IXFK)
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Double metal process for low gate
resistance
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
• miniBLOCK package version with
Aluminum Nitrate isolation
Advantages
• Easy to mount
• Space savings
• High power density
© 2008 IXYS CORPORATION,All rights reserved
DS99150B(5/08)
 ▷