IXFK360N10T Datasheet, PDF (1/6 Pages) IXYS Corporation – GigaMOS Trench HiperFET Power MOSFET

Preliminary Technical Information
GigaMOS^TM Trench
HiperFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK360N10T
IXFX360N10T
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
100V
360A
2.9mΩ
130ns
TO-264 (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_L(RMS)
I_DM
I_A
E_AS
P_D
dv/dt
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
External Lead Current Limit
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
360
A
160
A
900
A
100
A
3
J
1250
W
20
V/ns
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 3mA
2.5
4.5 V
I_GSS
V_GS = ± 20V, V_DS = 0V
± 200 nA
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
25 μA
2.5 mA
R_DS(on)
V_GS = 10V, I_D = 100A, Notes 1 & 2
2.9 mΩ
G
D
Tab
S
PLUS247 (IXFX)
G
D
S
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Synchronous Recification}
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2011 IXYS CORPORATION, All Rights Reserved
DS100210A(02/11)