IXFK33N50 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFK33N50
IXFK35N50
V
DSS
I
D25
500 V 33 A
500 V 35 A
t_rr £ 250 ns
R
DS(on)
0.16 W
0.15 W
Preliminary data
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I
D25
I_DM
I_AR
E_AS
E_AR
dv/dt
P_D
T
J
T_JM
T
stg
T_L
M_d
Weight
Symbol
V_DSS
V
GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
Maximum Ratings TO-264 AA
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T
C
= 25°C
33N50
35N50
T_C = 25°C,
pulse width limited by T
JM
T_C = 25°C
33N50
35N50
33N50
35N50
I_D = 32 A
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
500
V
500
V
±20
V
±30
V
33
A
35
A
132
A
140
A
30
A
35
A
2.5
J
45
mJ
5
V/ns
416
-55 ... +150
150
-55 ... +150
300
0.9/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
G
D
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
· International standard packages
· Molding epoxies meet UL 94 V-0
flammability classification
· Low R_{DS (on)} HDMOS^TM process
· Unclamped Inductive Switching (UIS)
rated
· Fast intrinsic rectifier
Applications
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
V_DSS temperature coefficient
500
V
0.102
%/K
V = V , I = 4 mA
DS
GS D
V_GS(th) temperature coefficient
2
-0.206
4V
%/K
V_GS = ±20 V_DC, V_DS = 0
±200 nA
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
200 mA
2 mA
V = 10 V, I = 16.5A
GS
D
33N50
35N50
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.16 W
0.15 W
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97517D (07/00)
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