IXFK32N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 32N80P
IXFX 32N80P
V_DSS
I_D25
R_DS(on)
t_rr
= 800 V
= 32 A
≤ 270 mΩ
≤ 250 ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-264)
TO-264
PLUS247
Maximum Ratings
800
V
800
V
±30
V
±40
V
32
A
70
A
16
A
50
mJ
2.0
J
10
V/ns
TO-264 (IXFK)
G
DS
PLUS247 (IXFX)
(TAB)
830
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
10
g
6
g
G = Gate
S = Source
Features
D = Drain
Tab = Drain
(TAB)
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
800
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
25 µA
1000 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
270 m Ω
l _{International standard packages}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99425E(01/06)