IXFK30N110P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK30N110P
IXFX30N110P
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
1100V
30A
360mΩ
300ns
TO-264 (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXFK)
Mounting force
(IXFX)
(IXFK)
(IXFX)
Maximum Ratings
1100
V
1100
V
± 30
V
± 40
V
30
A
75
A
15
A
1.5
J
15
960
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
Characteristic Values
Min. Typ.
Max.
1100
V
V_GS(th)
V_DS = V_GS, I_D = 1mA
3.5
6.5 V
I_GSS
V_GS = ± 30V, V_DS = 0V
± 200 nA
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
50 μA
2.5 mA
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
360 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{Fast intrinsic diode}
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications:
z _{High Voltage Switched-mode and}
resonant-mode power supplies
z _{High Voltage Pulse Power Applications}
z _{High Voltage Discharge circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC converters}
z _{High Voltage DC-AC inverters}
© 2008 IXYS CORPORATION, All rights reserved
DS99855B(04/08)