IXFK27N80Q_02 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-CLASS

HiPerFET^TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t_rr
IXFK 27N80Q
IXFX 27N80Q
V=
DSS
I_D25 =
= R_DS(on)
800 V
27 A
320 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
M
d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
Maximum Ratings PLUS 247^TM (IXFX)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V
DSS
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
800
V
800
V
±20
V
±30
V
27
A
108
A
27
A
60
mJ
2.5
J
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6g
10 g
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{IXYS advanced low Qg process}
z _{Low gate charge and capacitances}
- easier to drive
- faster switching
z _{International standard packages}
z _{Low RDS (on)}
z _{Rated for unclamped Inductive load}
switching (UIS) rated
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V = 10 V, I = 0.5 • I
GS
D
D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
800
V
2.0
4.5 V
±100 nA
T_J = 125°C
100 µA
2 mA
320 mΩ
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
z _{Temperature and lighting controls}
Advantages
z _{PLUS 247}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2002 IXYS All rights reserved
DS98722A (12/02)