IXFK27N80Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-CLASS

HiPerFET^TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
IXFK 27N80Q
IXFR 27N80Q
IXFX 27N80Q
V_DSS =
I_D25 =
= R_DS(on)
800 V
27 A
300 mW
t_rr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low t_rr
Symbol
V
DSS
V_DGR
V_GS
V
GSM
I_D25
I
DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T
stg
T_L
M_d
Weight
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
800
V
800
V
±20
V
±30
V
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
27
A
108
A
27
A
60
mJ
2.5
J
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
PLUS 247/ISOPLUS 247
TO-264
6g
10 g
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V = 0 V, I = 250uA
GS
D
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V =0V
GS
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
800
V
2.0
4.5 V
±100 nA
T
J
= 125°C
100 mA
2 mA
300 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
PLUS 247^TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
ISOPLUS 247^TM (IXFR)
E153432
(TAB)
G = Gate
S = Source
G
D
Isolated back surface*
D = Drain
TAB = Drain
Features
• IXYS advanced low Q_g process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R_{DS (on)}
• Rated for unclamped Inductive load
switching (UIS) rated
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247^TMpackage for clip or spring
mounting
• Space savings
• High power density
98722 (05/22/00)
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