IXFK27N80 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs

HiPerFET^TM Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
V
DSS
800 V
800 V
800 V
800 V
I
D25
27 A
25 A
27 A
25 A
R
DS(on)
0.30 W
0.35 W
0.30 W
0.35 W
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
V_GS
V_GSM
I
D25
I
DM
I_AR
E_AR
dv/dt
P
D
T_J
T_JM
T_stg
T_L
V
ISOL
M_d
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
800
800
V
800
800
V
±20
±20
V
±30
±30
V
T
C
= 25°C, Chip capability
27N80 27
25N80 25
27
A
25
A
T
C
=
25°C,
pulse
width
limited
by
T
JM
27N80
108
108
A
T_C = 25°C
25N80 100
100
A
27N80 14
14
A
25N80 13
13
A
T_C= 25°C
I_S£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
T_J £ 150°C, R_G = 2 W
T
C
= 25°C
30
30
mJ
5
5 V/ns
500
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6 mm (0.063 in) from case for 10 s
300
-
°C
50/60 Hz, RMS
I_ISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
-
-
0.9/6
-
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ.
max.
V_DSS
V
GH(th)
I_GSS
I_DSS
R_DS(on)
V_GS = 0 V, I_D = 3 mA
V_DSS temperature coefficient
V = V , I = 8 mA
DS
GS D
V_GS(th) temperature coefficient
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
800
2
T_J = 25°C
T_J = 125°C
25N80
27N80
0.096
-0.214
V
%/K
4.5 V
%/K
±200 nA
500 mA
2 mA
0.35 W
0.30 W
TO-264 AA (IXFK)
G
D
S
(TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
D
G
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
· International standard packages
· JEDEC TO-264 AA,epoxy meet
UL 94 V-0, flammability classification
· miniBLOC,with Aluminium nitride
isolation
·
Low R HDMOSTM process
DS (on)
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95561C (3/98)
1-4