IXFK24N90Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-CLASS

HiPerFET^TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
IXFK 24N90Q
IXFX 24N90Q
V
=
DSS
I
=
D25
= R_DS(on)
t_rr £ 250 ns
900 V
24 A
0.45 W
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t_rr
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T
stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
900
V
900
V
±20
V
±30
V
24
A
96
A
24
A
60
mJ
2.5
J
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6g
10 g
Symbol
V_DSS
V_GS(th)
I_GSS
I
DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 250uA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
900
V
2.5
4.5 V
±100 nA
T_J = 125°C
100 mA
2 mA
0.45 W
PLUS 247^TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{IXYS advanced low Qg process}
l _{Low gate charge and capacitances}
- easier to drive
- faster switching
l _{International standard packages}
l _{Low RDS (on)}
l _{Rated for unclamped Inductive load}
switching (UIS)
rated
l _{Molding epoxies meet UL 94 V-0}
flammability classification
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
l _{Temperature and lighting controls}
Advantages
l _{PLUS 247}TM _{package for clip or spring}
mounting
l _{Space savings}
l _{High power density}
© 2000 IXYS All rights reserved
98679B (08/00)