IXFK24N100_08 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM Power
MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
IXFK24N100
IXFX24N100
V_DSS =
I_D25 =
≤ R_DS(on)
t
rr
≤
1000V
24A
390mΩ
250ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force (PLUS247)
Mounting torque (TO-264)
PLUS247
TO-264
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
24
A
96
A
24
A
3
J
5
560
-55 ... +150
150
-55 ... +150
300
260
20..120/4.5..27
1.13/10
6
10
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.5 V
±200 nA
100 μA
2 mA
390 mΩ
TO-264 (IXFK)
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Avalanche rated
• Low package inductance
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor drives
• Temperature and lighting controls
Advantages
• PLUS 247^TM package for clip or spring
mounting
• Space savings
• High power density
© 2008 IXYS CORPORATION, All rights reserved
DS98598D(10/08)