IXFK24N100F Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRF^TM
Power MOSFETs
IXFX 24N100F
IXFK 24N100F
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
V_DSS
I_D25
R_DS(on)
= 1000 V
= 24 A
= 0.39 Ω
t_rr ≤ 250 ns
Symbol
V _DSS
V _DGR
V_GS
V_GSM
I _D25
I _DM
I _AR
E _AR
E _AS
dv/dt
P_D
T_J
T
JM
T _stg
T
L
M_d
Weight
Symbol
V _DSS
V _GS(th)
I _GSS
I _DSS
R _DS(on)
PLUS 247^TM (IXFX)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
1000
1000
±20
±30
24
96
24
60
3.0
10
V
V
V
V
A
A
A
mJ
J
V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6
g
10
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V =0V
GS
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1000
V
3.0
5.5 V
±200 nA
T_J = 25°C
T = 125°C
J
100 mA
3 mA
0.39 Ω
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{RF capable MOSFETs}
z _{Double metal process for low gate}
resistance
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC choppers}
z _{Pulse generation}
z _{Laser drivers}
Advantages
z _{PLUS 247}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2002 IXYS All rights reserved
98874-A(8/02)