IXFK21N100Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-CLASS

HiPerFET^TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
IXFK 21N100Q
IXFX 21N100Q
V=
DSS
I_D25 =
= R_DS(on)
1000 V
21 A
0.50 Ω
t_rr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t_rr
PLUS 247^TM (IXFX)
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
TT_CC
= 25°C
= 25°C
IT_SJ
≤
≤
1I^D5^M0, °^{dCi/,dRt ≤}_G
100
=2
A/µs,
Ω
V_DD
≤
V_DSS
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
1000
1000
±20
±30
21
84
21
60
2.5
10
V
V
V
V
A
A
A
mJ
J
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6
g
10
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1000
V
3
5.5
V
±100
nA
100
µA
2
mA
0.50
Ω
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Q_g process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
•
•
LRoawteRd_{DfSo(ronu) nclamped}
Inductive
load
switching (UIS) rated
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power
supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247^TM package for clip or spring
mounting
• Space savings
• High power density
© 2002 IXYS All rights reserved
DS98677D(10/03)