IXFK21N100F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerRF Power MOSFETs

HiPerRF^TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low
Intrinsic R_g, High dV/dt, Low t_rr
IXFK21N100F
IXFX21N100F
V_DSS
=
I_D25
=
R_DS(on) ≤
1000V
21A
500mΩ
t_rr
≤ 250ns
TO-264 (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
1000
V
1000
V
± 20
V
± 30
V
21
A
84
A
21
A
2.5
J
10
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.5 V
± 200 nA
100 μA
2 mA
500 mΩ
G
D
S
Tab
PLUS247 (IXFX)
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{RF Capable MOSFETs}
z _{Double Metal Process for Low Gate}
Resistive
z _{Avalanche Rated}
z _{Fast Intrinsic Rectifier}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Switch-Mode and Resonant-Mode}
Power Supplies, >500kHz Switching
z _{DC Choppers}
z _{13.5 MHz Industrial Applications}
z _{Pulse Generation}
z _{Laser Drivers}
z _{RF Amplifiers}
© 2010 IXYS CORPORATION, All Rights Reserved
DS98880A(05/10)