IXFK20N120P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK20N120P
IXFX20N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXFK)
Mounting force
(IXFX)
TO-264
PLUS247
Maximum Ratings
1200
V
1200
V
± 30
V
± 40
V
20
A
50
A
10
A
1
J
15
V/ns
780
W
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
Characteristic Values
Min. Typ. Max.
1200
V
V_GS(th)
V_DS = V_GS, I_D = 1mA
3.5
6.5
V
I_GSS
V_GS = ± 30V, V_DS = 0V
± 200 nA
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
25 μA
5 mA
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
570 mΩ
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
1200V
20A
570mΩ
300ns
TO-264 (IXFK)
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{Fast intrinsic diode}
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications:
z _{High Voltage Switched-mode and}
resonant-mode power supplies
z _{High Voltage Pulse Power Applications}
z _{High Voltage Discharge circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC converters}
z _{High Voltage DC-AC inverters}
© 2008 IXYS CORPORATION,All rights reserved
DS99854B(04/08)