IXFK200N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar^TM HiPerFET
Power MOSFET
IXFK 200N10P
IXFX 200N10P
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
V=
DSS
I_D25 =
≤ R_DS(on)
t
rr
≤
100 V
200 A
7.5 mΩ
150 ns
Symbol
Test Conditions
Maximum Ratings TO-264 (IXFK)
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I
D(RMS)
I_DM
I
AR
E_AR
E
AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
M_d
F_C
Weight
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T
C
= 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T
C
=
25°C
1.6mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque TO-264
Mounting force PLUS247
TO-264
PLUS247
100
V
100
V
±20
V
±30
V
200
A
75
A
400
A
60
A
100
mJ
4
J
10
V/ns
830
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
0.9/6 Nm/lb.in
20 120/45 26 Nm/lb.in
10
g
6
g
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
3.0
5.0 V
I
GSS
V
GS
=
±20
V,
V
GS
=
0
V
±100 nA
I_DSS
V_DS = V_DSS
T_J = 150°C
T
J
=
175°C
25 μA
500 μA
2.5 mA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
V_GS = 15 V, I_D = 400A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
7.5 mΩ
5.5
mΩ
G
D
S
PLUS247 (IXFX)
D (TAB)
D
S
TAB
G = Gate D = Drain
S = Source Tab = Drain
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99590E(03/06)