IXFK180N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFK 180N15P
IXFX 180N15P
V = 150 V
DSS
I_D25 = 180 A
≤ R_DS(on) 11 m Ω
t_rr
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
V
DSS
V_DGR
V_DS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M
d
F_c
Weight
T
J
= 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS
T
J
≤150° C,
R
G
=
4
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (IXFK)
Mounting Force (IXFX)
TO-264 (IXFK)
PLUS247 (IXFX)
Symbol
Test Conditions
(T
J
=
25°
C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Note 1
T_J = 150° C
150
V
150
V
±20
V
±30
V
180
A
75
A
380
A
60
A
100
mJ
4
J
10
V/ns
830
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
20..120/4.5..25
N/lb
10
g
6
g
Characteristic Values
Min. Typ. Max.
150
V
2.5
5.0 V
±200 nA
25 µA
250 µA
11 m Ω
TO-264 (IXFK)
G
D
TAB
S
PLUS247 (IXFX)
G = Gate
S = Source
TAB
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99218E(01/06)