IXFK180N10_09 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiperFET Power MOSFETs

HiperFET^TM Power
MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK180N10
IXFX180N10
V_DSS =
I_D25 =
≤ R_DS(on)
100V
180A
8mΩ
TO-264 (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C ( Chip Capabitlty)
Leads Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
MountingTorque
(PLUS247)
(TO-264)
PLUS247
TO-264
Maximum Ratings
100
V
100
V
±20
V
±30
V
180
A
160
A
720
A
180
A
3
J
5
V/ns
560
W
-55 ... +150
150
-55 ... +150
300
260
20..120/4.5..27
1.13/10
6
10
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
100
V
2.0
4.0 V
±100 nA
100 μA
2 mA
8 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{International Standard Packages}
z _{High Current Handling Capability}
z _{Avalanche Rated}
z _{Low RDS(on) HDMOS}TM _Process
z _{Fast intrinsic diode}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Temperature and Lighting Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS98552D(02/09)