IXFK180N10 Datasheet, PDF (1/4 Pages) IXYS Corporation – Single MOSFET Die

HiPerFET^TM
Power MOSFETs
Single MOSFET Die
Preliminary data sheet
IXFK 180N10
IXFX 180N10
V_DSS =
I_D25 =
= R_DS(on)
100 V
180 A
8 mW
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I
DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C, Note 1
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
100
V
100
V
±20
V
±30
V
180
A
76
A
720
A
180
A
60
mJ
3
J
5 V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247^TM
(IXFX)
G
D
TO-264 AA (IXFK)
D (TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Symbol
V
DSS
V
GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V = 0 V, I = 3mA
GS
D
V = V , I = 8mA
DS
GS D
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
100
V
2.0
4.0 V
±100 nA
T_J = 25°C
T_J = 125°C
100 mA
2 mA
8 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247^TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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