IXFK180N07 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
Single MOSFET Die
Preliminary Data Sheet
IXFK 180N07
IXFX 180N07
V_DSS =
I=
D25
= R_DS(on)
70 V
180 A
6 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I
D25
I_D(RMS)
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T
stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T
C
= 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C, Note 1
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
70
V
70
V
±20
V
±30
V
180
A
76
A
720
A
180
A
60
mJ
3
J
5 V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247^TM
G
D
TO-264 AA (IXFK)
D (TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
70
V
2.0
4.0 V
±100 nA
T_J = 25°C
T_J = 125°C
100 µA
2 mA
6 mΩ
Applications
z _{DC-DC converters}
z _{Synchronous rectification}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{Temperature and lighting controls}
z _{Low voltage relays}
Advantages
z _{PLUS 247}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS98556C(01/03)