IXFK170N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar Power MOSFET HiperFET

Preliminary Technical Information
Polar^TM Power MOSFET
HiperFET^TM
IXFK170N20P
IXFX170N20P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS =
I_D25 =
≤ R_DS(on)
200V
170A
14mΩ
TO-264 (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
Leads Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force (PLUS247)
Mounting torque (TO-264)
PLUS247
TO-264
Maximum Ratings
200
V
200
V
±20
V
±30
V
170
A
75
A
400
A
85
A
4
J
20
V/ns
1250
W
-55 ... +175
175
-55 ... +175
300
260
20..120/4.5..27
1.13/10
6
10
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
200
V
3.0
5.0 V
±200 nA
50 μA
1 mA
14 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
• Fast intrinsic diode
• Avalanche Rated
• Low R_DS(ON) and Q_G
• Low package inductance
Advantages
• Low gate charge results in simple
drive requirement
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS100008(7/08)