IXFK140N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TMHiPerFET IXFK 140N20P
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V = 200 V
DSS
I_D25 = 140 A
≤ R_DS(on) 18 mΩ
t_rr
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings _{TO-264 (IXFK)}
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
200
V
200
V
±20
V
±30
V
140
A
G
D
S
75
A
(TAB)
280
A
G = Gate
D = Drain
60
A
S = Source
TAB = Drain
100
mJ
4
J
dv/dt
P_D
T_J
T
JM
T_stg
T_L
T_SOLD
M_d
Weight
I
S
≤
I,
DM
di/dt
≤ 100
A/µs,
V
DD
≤
V,
DSS
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
10
V/ns
830
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
10
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
150°
C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
V_GS = 15 V, I_D = 140A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
18 m Ω
14
mΩ
Features
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99219E(01/06)