IXFK120N25 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

Advance Technical Information
HiPerFET^TM
Power MOSFETs
Single MOSFET Die
IXFX 120N25
IXFK 120N25
V_DSS =
I_D25 =
= R_DS(on)
250 V
120 A
22 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D104
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T
L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C (MOSFET chip capability)
T_C = 104°C (External lead capability)
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
250
V
250
V
±20
V
±30
V
120
A
75
A
480
A
90
A
64
mJ
3
J
5 V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.7/6 Nm/lb.in.
6
g
10
g
PLUS 247^TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic rectifier}
Symbol
V
DSS
V
GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V = 0 V, I = 1mA
GS
D
V = V , I = 8mA
DS
GS D
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
250
V
2.0
4.0 V
±200 nA
T_J = 25°C
T_J = 125°C
50 µA
3 mA
22 mΩ
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
l _{Temperature and lighting controls}
Advantages
l _{PLUS 247}TM _{package for clip or spring}
mounting
l _{Space savings}
l _{High power density}
© 2002 IXYS All rights reserved
98912 (2/02)