IXFK110N06 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFK 110 N06
IXFK 105 N07
IXFK 110 N07
V
DSS
I
D25
60 V 110 A
70 V 105 A
70 V 110 A
t_rr £ 250 ns
R
DS(on)
6 mW
7 mW
6 mW
Symbol
Test Conditions
V
DSS
T
J
=
25°C
to
150°C
V
DGR
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
V
GS
V_GSM
I
D25
I_D130
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
Continuous
Transient
T
C
=
25°C,
die
capability
T_C = 130°C, limited by external leads
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
T_L
1.6 mm (0.063 in) from case for 10 s
M
Mounting torque
d
Terminal connection torque
Weight
Maximum Ratings
N07
70
V
N06
60
V
N07
70
V
N06
60
V
±20
V
±30
V
110
A
76
A
600
A
100
A
30
mJ
2
J
5
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
0.9/6
-
10
°C
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
V
DSS
V
GS (th)
I_GSS
I_DSS
R_DS(on)
V
= 0 V, I = 1 mA
GS
D
V
= V , I = 8 mA
DS
GS D
V_GS
= ±20 V_DC, V_DS = 0
V_DS
= 0.8 • V_DSS
V_GS
=0V
V_GS
= 10 V, I_D = 0.5 • I_D25
Note 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
N06
60
N07
70
2
T_J = 25°C
T_J = 125°C
110N06/110N07
105N07
V
V
4V
±200 nA
400 mA
2 mA
6 mW
7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
TO-264 AA (IXFK)
G
D
S
(TAB)
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL94V-0, flammability classification
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
92802I (10/97)
1-4