IXFK102N30P Datasheet, PDF (1/2 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

Preliminary Technical Information
PolarHT^TM HiPerFET IXFK 102N30P
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
300 V
102 A
33 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings
V
DSS
V_DGR
V_GS
V_GSM
I
D25
I_D(RMS)
I_DM
I
AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T
SOLD
M_d
Weight
T
J
= 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T
C
= 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque, Terminal lead torque
TO-264
300
V ^{TO-264 (IXFK)}
300
V
±20
V
±30
V
102
A
G
75
A
D
S
250
A
(TAB)
60
A
G = Gate
D = Drain
60
mJ _{S = Source}
2.5
J
10
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
10
g
Features
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T
J
=
25°
C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
300
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
33 m Ω
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99221E(05/06)