IXFJ36N30 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET

ADVANCE TECHNICAL INFORMATION
HiPerFET^TM
N-Channel Enhancement Mode
IXTJ 36N20
V_DSS = 200 V
I_D25 = 36 A
R_DS(on) = 70 mΩ
t_rr < 200 ns
Symbol
Test Conditions
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P
D
T_J
T_JM
T_stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200
V
200
V
±20
V
±30
V
36
A
144
A
36
A
19
mJ
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
5
g
300
°C
Symbol
V
DSS
V_GS(th)
I_GSS
I
DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
200
V_DS = V_GS, I_D = 4 mA
2
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 18A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4V
±100 nA
25 µA
250 µA
70 mΩ
G
D
S
é
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•High commutating dv/dt rating
•Fast switching times
Applications
• Switch-mode and resonant-mode
power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2001 IXYS All rights reserved
98859 9/01