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IXFJ32N50Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs | |||
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low trr, HDMOSTM Family
IXFJ 32N50Q VDSS = 500 V
ID(cont) = 32 A
RDS(on) = 0.15 W
trr
< 250 ns
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAs
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500
V
500
V
±20
V
±30
V
32
A
128
A
32
A
1.5
J
45
mJ
5 V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
G
D
S
é
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
⢠Low profile, high power package
⢠Long creep and strike distances
⢠Easy up-grade path for TO-220
designs
⢠Low RDS (on) low Qg process
⢠Rugged polysilicon gate cell structure
⢠Unclamped Inductive Switching (UIS)
rated
⢠Low package inductance
- easy to drive and to protect
⢠Fast intrinsic Rectifier
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 250 mA
500
VDS = VGS, ID = 4 mA
2
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4V
±100 nA
100 mA
1 mA
0.15 W
Applications
⢠DC-DC converters
⢠Synchronous rectification
⢠Battery chargers
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠AC motor control
⢠Temperature and lighting controls
⢠Low voltage relays
Advantages
⢠High power, low profile package
⢠Space savings
⢠High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98579B (5/31/00)
1-4
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