IXFI7N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFA 7N80P
IXFI 7N80P
IXFP 7N80P
V_DSS = 800 V
I_D25 =
7A
R_DS(on) ≤ 1.44 Ω
t
rr
≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M
d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220, TO-3P)
TO-220
TO-263
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
7
A
18
A
4
A
20
mJ
300
mJ
10
V/ns
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
3
g
2.5
g
TO-263 (IXFA)
G
S
(TAB)
Leaded TO-263 (IXFI)
G
D
S
TO-220 (IXFP)
(TAB)
G _DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250μA
Characteristic Values
Min. Typ. Max.
800
V
V_GS(th)
V_DS = V_GS, I_D = 1 mA
3.0
5.0 V
I_GSS
V_GS = ±30 V, V_DS = 0 V
±100 nA
I_DSS
R_DS(on)
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
25 μA
500 μA
1.44 Ω
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99597E(08/06)