IXFH96N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 96N20P
IXFT 96N20P
IXFV 96N20P
V
DSS
I_D25
R_DS(on)
t_rr
= 200 V
= 96 A
≤ 24 mΩ
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings ^{TO-247 (IXFH)}
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting torque (TO-247)
TO-220
TO-247
TO-268
200
V
200
V
±20
V
±30
V
96
A
G
DS
75
A
225
A ^{TO-268 (IXFT)}
60
A
50
mJ
1.5
J
G
S
10
V/ns
600
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
6
g
5
g
PLUS220 (IXFV)
G
D
S
G = Gate
S = Source
Features
(TAB)
D (TAB)
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
24 m Ω
l _{Fast Intrinsic Diode}
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99222E(02/06)