IXFH96N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
IXFH 96N15P
IXFV 96N15P
IXFV 96N15PS
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
150
96
24
200
V
A
mΩ
ns
TO-247 (IXFH)
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_D(RMS)
I_DM
I
AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
F_C
M_d
Weight
Test Conditions
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤175° C, R_G = 4 Ω
T
C
= 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting force
(PLUS220)
Mounting torque (TO-247)
TO-247
PLUS220
Maximum Ratings
150
V
150
V
±20
V
±30
V
96
A
75
A
250
A
60
A
40
mJ
1.0
J
10
V/ns
G
DS
PLUS220 (IXFV)
(TAB)
G
DS
D (TAB)
PLUS220SMD (IXFV__S)
480
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
11...65/2.4...11
N/lb
1.13/10 Nm/lb.in.
6
g
4
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
3.0
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 175° C
25 µA
1000 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
24 m Ω
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99208E(12/05)