IXFH88N20Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
IXFH 88N20Q
IXFK 88N20Q
IXFX 88N20Q
V = 200 V
DSS
I_D25 = 88 A
= R_DS(on) 30 mΩ
t_rr
≤ 200 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T
JM
T_stg
T
L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
200
V
200
V
±30
V
±40
V
88
A
352
A
88
A
50
mJ
2.5
J
20 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Mounting torque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TO-247, PLUS 247 6
g
TO-264
10
g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_GS = 0 V, I_D = 250 uA
200
V_DS = V_GS, I_D = 4 mA
2.0
V_GS = ±20 V DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.0 V
±100 nA
25 µA
1 mA
30 mΩ
TO-247 AD (IXFH)
TO-264 AA (IXFK)
G
D
S
PLUS 247^TM (IXFX)
D (TAB)
D (TAB)
G
D
D (TAB)
G = Gate
S = Source
TAB = Drain
Features
z _{Low gate charge}
z _{International standard packages}
z _{Epoxy meet UL 94 V-0, flammability}
classification
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Avalanche energy and current rated}
z _{Fast intrinsic Rectifier}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS98969A(03/03)