IXFH80N20Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
IXFH 80N20Q
IXFK 80N20Q
IXFT 80N20Q
V_DSS = 200 V
I_D25 = 80 A
= R_DS(on) 28 mW
t_rr
£ 200 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P
D
T_J
T
JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I
DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Maximum Ratings
200
V
200
V
±20
V
±30
V
80
A
320
A
80
A
45
mJ
1.5
J
5 V/ns
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
(TAB)
(TAB)
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
g
10
g
4
g
G
D
S
G = Gate
S = Source
D (TAB)
TAB = Drain
Features
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 uA
200
V_DS = V_GS, I_D = 4 mA
2.0
V_GS = ±20 V_DC, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
T=
J
25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.0 V
±100 nA
25 mA
1 mA
28 mW
• Low gate charge
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
• Low R HDMOS^TM process
DS (on)
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98605A (6/99)
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