IXFH80N15Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
IXFH 80N15Q
IXFK 80N15Q
IXFT 80N15Q
V
DSS
I_D25
R_DS(on)
t_rr
= 150 V
= 80 A
= 22.5 mW
£ 200 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I
DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T
stg
T_L
M_d
Weight
Symbol
V
DSS
V
GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
80
A
320
A
80
A
45
mJ
1.5
J
5 V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
g
10
g
4
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V = 0 V, I = 250 uA
150
GS
D
V = V , I = 4 mA
2.0
DS
GS D
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.0 V
±100 nA
25 mA
1 mA
22.5 m W
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
(TAB)
(TAB)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Features
l _{Low gate charge}
l _{International standard packages}
l _{Epoxy meet UL 94 V-0, flammability}
classification
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Avalanche energy and current rated}
l _{Fast intrinsic Rectifier}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2000 IXYS All rights reserved
98725 (05/31/00)