IXFH80N10Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary data
IXFH 80N10Q
IXFT 80N10Q
V_DSS
I_D25
R_DS(on)
= 100 V
= 80 A
= 15 mW
t_rr £ 200ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
TO-247 AD
TO-268
Maximum Ratings
100
V
100
V
±20
V
±30
V
80
A
320
A
80
A
30
mJ
1.5
J
5
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 mA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
100
V
2.0
4V
±100 nA
25 mA
1 mA
15 mW
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low gate charge
process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low R
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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