IXFH80N10 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N10
IXFT 80N10
V_DSS = 100 V
I_D25 = 80 A
R_DS(on) = 12.5 mΩ
t_rr ≤ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I
L(RMS)
I
DM
I_AR
E_AR
E_AS
dv/dt
P
D
T
J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
Lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T
J
≤
150°C,
R
G
=
2
Ω
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
100
100
±20
±30
80
75
320
80
50
2.5
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
300
W
-55 to +150
°C
150
°C
-55 to +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
100
V_DS = V_GS, I_D = 4 mA
2.0
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.0 V
±100 nA
50 µA
1 mA
12.5 m Ω
TO-247 AD (IXFH)
(TAB)
TO-268 ( IXFT) Case Style
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l _{International standard packages}
l _{Low RDS (on)}
l _{Rated for unclamped Inductive load}
switching (UIS)
l _{Molding epoxies meet UL 94 V-0}
flammability classification
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2000 IXYS All rights reserved
98739 (8/00)