IXFH80N085 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N085
IXFT 80N085
V_DSS = 85 V
I_D25 = 80 A
R_DS(on) = 9 mW
t_rr £ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_L(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R
DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
Lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
85
V
85
V
±20
V
±30
V
80
A
75
A
320
A
80
A
50
mJ
2.5
J
5
V/ns
300
-55 to +150
150
-55 to +150
300
1.13/10
6
4
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
85
V_DS = V_GS, I_D = 4 mA
2.0
V
GS
=
±20
V,
DC
V
DS
=
0
V_DS = V_DSS
V =0V
GS
T_J = 25°C
T
J
= 125°C
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.0 V
±100 nA
50 mA
1 mA
9 mW
Features
• International standard packages
• Low R_{DS (on)}
• Rated for unclamped Inductive load
switching (UIS)
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98709 (03/24/00)
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