IXFH7N80 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
IXFH 7 N80
IXFM 7 N80
V_DSS
I_{D (cont)}
R_DS(on)
t_rr
= 800 V
=7A
= 1.4 W
= 250 ns
Symbol
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
dv/dt
P_D
T
J
T_JM
T
stg
T_L
M_d
Weight
Symbol
V_DSS
V
GS(th)
I
GSS
I_DSS
R
DS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
800
V
800
V
±20
V
±30
V
7
A
28
A
7
A
18
mJ
5
V/ns
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-204 AA (IXFM)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 3 mA
800
V = V , I = 2.5 mA
2
DS
GS D
V
GS
=
±20
V,
DC
V
DS
=
0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.5 V
±100 nA
250 mA
1 mA
1.4 W
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91527F(7/97)
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