IXFH76N06-11 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
V
DSS
60 V
60 V
70 V
70 V
I
D25
76 A
76 A
76 A
76 A
R
DS(on)
11 mW
12 mW
11 mW
12 mW
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_D119
I_DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T
stg
T_L
M_d
Weight
Symbol
V
DSS
V
GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 10 kW
Continuous
Transient
T
C
= 25°C (Chip capability = 125 A)
T_C = 119°C, limited by external leads
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
N06
60
V
N07
70
V
N06
60
V
N07
70
V
±20
V
±30
V
76
A
76
A
304
A
100
A
30
mJ
2
J
5
V/ns
360
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
1.15/10 Nm/lb.in.
6
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
0
V,
I
D
=
250
mA
N06
60
N07
70
V = V , I = 4 mA
2.0
DS
GS D
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 40 A
76 N06/N07-11
76 N06/N07-12
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
V
3.4 V
±100 nA
100 mA
500 mA
11 mW
12 mW
TO-247 AD
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
q _{International standard package}
JEDEC TO-247 AD
q Low R HDMOSTM process
DS (on)
q _{Rugged polysilicon gate cell structure}
q _{Unclamped Inductive Switching (UIS)}
rated
q _{Low package inductance}
- easy to drive and to protect
q _{Fast intrinsic Rectifier}
Applications
q _{DC-DC converters}
q _{Synchronous rectification}
q _{Battery chargers}
q _{Switched-mode and resonant-mode}
power supplies
q _{DC choppers}
q _{Temperature and lighting controls}
q _{Low voltage relays}
Advantages
q _{Easy to mount with 1 screw}
(isolated mounting screw hole)
q _{Space savings}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92785H (12/98)
1-4