IXFH75N10Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HIPER FET POWER MOSFETS Q CLASS

Advanced Technical Information
HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Low Gate Charge and Capacitances
IXFH 75N10Q
IXFT 75N10Q
V_DSS
I_D25
R_DS(on)
= 100 V
= 75 A
= 20 mW
t_rr £ 200ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
100
V
100
V
±20
V
±30
V
75
A
300
A
75
A
30
mJ
1.5
J
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.0
4V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I _DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
25 µA
1 mA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
20 m Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
l _{IXYS advanced low gate charge}
process
l _{International standard packages}
l _{Low gate charge and capacitance}
- easier to drive
- faster switching
l _{Low RDS (on)}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Molding epoxies meet UL 94 V-0}
flammability classification
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 1999 IXYS All rights reserved
98550A (6/99)