IXFH74N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
Preliminary Data Sheet
IXFH 74N20P
IXFV 74N20P
IXFV 74N20PS
V_DSS =
I_D25 =
= R_DS(on)
t_rr
≤
200 V
74 A
34 mΩ
200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
F_C
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting Force (PLUS220)
Mounting torque (TO-247)
TO-247
PLUS220
Maximum Ratings
200
V
200
V
TO-247 (IXFH)
±20
V
±30
V
74
A
G
200
A
D
S
60
A
40
mJ _{PLUS220 (IXFV)}
1.0
J
D (TAB)
10
V/ns
480
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
250
°C
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
6.0
g
4.0
g
G
DS
D (TAB)
PLUS220SMD (IXFV-PS)
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
D (TAB)
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
34 mΩ
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99209(09/04)