IXFH70N15 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs

Advanced Technical Information
HiPerFET^TM
Power MOSFETs
IXFH 70N15
IXFT 70N15
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
V_DSS
I_D25
R_DS(on)
= 150 V
= 70 A
= 28 mW
t_rr £ 250ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
70
A
280
A
70
A
30
mJ
1.0
J
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 mA
V
GS(th)
V
DS
=
V,
GS
I
D
=
4
mA
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
150
V
2.0
4.0 V
±100 nA
25 mA
750 mA
28 mW
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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