IXFH6N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage HiPerFET Power MOSFET

High Voltage
HiPerFET Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
IXFH 6N120
V_DSS = 1200 V
I_{D (cont)} = 6 A
R_DS(on) = 2.6 Ω
t_rr
≤ 300 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T
stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
6
A
24
A
6
A
25
mJ
500
mJ
10
V/ns
TO-247 AD (IXTH)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Features
z _{International standard packages}
z _{Low R}
HDMOS^TM process
DS (on)
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
1200
V
V_GS(th)
V_DS = V_GS, I_D =2.5 mA
3.0
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
50 µA
1500 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.6 Ω
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99335(02/05)