IXFH69N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar^TM HiPerFET^TM
Power MOSFET
IXFH69N30P
IXFT69N30P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J≤ 150°C
T_C = 25°C
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
300
V
300
V
± 20
V
± 30
V
69
A
200
A
69
A
1.5
J
20
V/ns
500
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250µA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
300
V
2.5
5.0 V
±100 nA
25 µA
250 µA
49 mΩ
V_DSS = 300V
I_D25 = 69A
≤ R_DS(on) 49mΩ
t_rr
≤ 200ns
TO-247 (IXFH)
G
DS
D (Tab)
TO-268 (IXFT)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low RDS(ON) and QG}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Coverters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC and DC Motor Drives}
z _{Uninterrupted Power Supplies}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS99220F(10/09)