IXFH68N20 Datasheet, PDF (1/2 Pages) IXYS Corporation – HIPERFET POWER MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
IXFH/IXFT 68N20
IXFH/IXFT 74N20
V_DSS I_D25 R_DS(on)
200 V 68 A 35 mW
200 V 74 A 30 mW
t_rr £ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I _DSS
R_DS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
200
V
200
V
±20
V
±30
V
68N20
68
A
74N20
74
A
68N20
272
A
74N20
296
A
68N20
68
A
74N20
74
A
45
mJ
5
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 4 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
200
2
T_J = 25°C
T_J = 125°C
V_GS= 10 V, I_D = 0.5 I_D25
74N20
68N20
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4V
±100 nA
200 mA
1 mA
30 m W
35 m W
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
• International standard packages
•
•
Low R_DS
Rugged
(on) ^{HDMOSTM process}
polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface package
• High power density
© 2000 IXYS All rights reserved
97522C (8/00)