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IXFH67N10 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs
HiPerFETTM
Power MOSFETs
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
V
DSS
100 V
100 V
I
D25
67 A
75 A
R
DS(on)
25 mW
20 mW
trr £ 200 ns
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
I
DM
IAR
EAR
dv/dt
PD
T
J
TJM
Tstg
T
L
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
67N10
75N10
67N10
75N10
67N10
75N10
100
V
100
V
±20
V
±30
V
67
A
75
A
268
A
300
A
67
A
75
A
30
mJ
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 mA
100
VDS = VGS, ID = 4 mA
2.0
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 0.5 ID25
67N10
75N10
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4V
±100 nA
250 mA
1 mA
0.025 W
0.020 W
TO-247 AD (IXFH)
TO-204 AE (IXFM)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
- easy to drive and to protect
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q AC motor control
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91521F (10/95)
1-4