IXFH66N20Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q_g
Preliminary data sheet
IXFH 66N20Q
IXFT 66N20Q
V_DSS =
I=
D25
= R_DS(on)
200 V
66 A
40 mΩ
t_rr ≤ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T
J
≤
150°C,
R
G
=
2
Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
200
V
200
V
±30
V
±40
V
66
A
264
A
66
A
40
mJ
1.5
J
20
V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.0
4.0 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
I_DSS
R_DS(on)
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
25 µA
1 mA
40 m Ω
TO-268 (D3) (IXFT) Case Style
G
S
TO-247 AD
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{IXYS advanced low Qg process}
z _{International standard packages}
z _{Low gate charge and capacitance}
- easier to drive
- faster switching
z _{Low RDS (on)}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99039(04/03)