IXFH60N25Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

Advanced Technical Information
HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Low Gate Charge and Capacitances
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
V_DSS = 250 V
I_D25 = 60 A
= R_DS(on) 47 mW
t_rr
£ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T
stg
T_L
M_d
Weight
Symbol
V
DSS
V
GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Maximum Ratings
250
V
250
V
±20
V
±30
V
60
A
240
A
60
A
45
mJ
1.5
J
5
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
g
10
g
4
g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 1 mA
250
GS
D
V = V , I = 4 mA
2
DS
GS D
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4V
±200 nA
50 mA
1 mA
47 mW
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
(TAB)
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Features
• Low gate charge
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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