IXFH60N20F_08 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerRF Power MOSFET F-Class: MegaHertz Switching

Advance Technical Information
HiPerRF^TM
Power MOSFET
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH60N20F
IXFT60N20F
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
200V
60A
38mΩ
200ns
TO-247
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
200
V
200
V
± 20
V
± 30
V
60
A
240
A
60
A
1.5
J
10
V/ns
320
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
200
V
3.0
5.0 V
± 100 nA
50 μA
1.5 mA
38 mΩ
TAB
TO-268
G
S
TAB
G = Gate D = Drain
S = Source TAB = Drain
Features
z _{International standard packages}
z _{Avalanche Rated}
z _{RF capable MOSFETs}
z _{Double metal process for low gate}
resistnace
z _{Low package inductance}
z _{Fast intrinsic diode}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications:
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC-DC Converters}
z _{Laser Drivers}
z _{13.5 Mhz industrial applications}
z _{Pulse generation}
© 2008 IXYS CORPORATION, All rights reserved
DS98885A(11/08)