IXFH52N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT Power MOSFET HiPerFET

PolarHT^TM Power
MOSFET HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFV52N30P
IXFV52N30PS
IXFH52N30P
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
300V
52A
66mΩ
200ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Maximum Ratings
300
V
300
V
± 20
V
Transient
± 30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
52
150
52
1
10
400
-55 ... +150
A
A
A
J
V/ns
W
°C
150
°C
-55 ... +150
°C
Maximum lead temperature for soldering
300
°C
Plastic body for 10s
260
°C
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
Mounting force (PLUS220)
11..65/2.5..14.6
N/lb.
PLUS220 & PLUS220SMD
TO-247
4
g
6
g
PLUS220 (IXFV)
G
DS
D (TAB)
PLUS220SMD (IXFV_S)
G
S
TO-247 (IXFH)
D (TAB)
D (TAB)
G = Gate
D = Drain
S = Source TAB = Drain
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
300
V
2.5
5.0 V
± 100 nA
25 μA
1 mA
66 mΩ
Features
z _{International standard packages}
z _{Fast recovery diode}
z _{Avalanche rated}
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2008 IXYS CORPORATION, All rights reserved
DS99197F(05/08)