IXFH44N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 44N50P
IXFK 44N50P
IXFT 44N50P
V = 500 V
DSS
I_D25 = 44 A
≤ R_DS(on) 140 mΩ
t_rr
≤ 200 ns
Symbol
V_DSS
V
DGR
V_GSM
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 175° C
T
J
=
25°
C
to
175°
C;
R
GS
=
1
MΩ
Transient
Continuous
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T
J
≤150° C,
R
G
=
10
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic case for 10 s
Mounting torque (TO-247)
TO-247
TO-268
TO-264
TO-247 AD (IXFH)
Maximum Ratings
500
V
500
V
±40
V
±30
V
44
A
110
A _{TO-264 (IXFK)}
44
A
55
mJ
1.7
J
10
V/ns
G
D
S
650
-55 ... +150
150
-55 ... +150
300
260
W
°C ^{TO-268 (IXFT)}
°C
°C
°C
G
S
°C
1.13/10 Nm/lb.in.
6
g
5
g
10
g
G = Gate
S = Source
(TAB)
(TAB)
(TAB)
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V
GS(th)
V = V , I = 4 mA
DS
GS D
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
I_GSS
I_DSS
R_DS(on)
V_GS = ±30 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
±10 nA
25 µA
500 µA
140 mΩ
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99366E(03/06)